Surface type semiconductor light switch
文献类型：专利
| 作者 | SUSA NOBUHIKO; OMACHI TOKURO; KAWAKAMI GOJI |
| 发表日期 | 1992-09-04 |
| 专利号 | JP1992249368A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface type semiconductor light switch |
| 英文摘要 | PURPOSE:To obtain a surface type semiconductor light switch which operates with low switching energy and produces a high light output with high speed response by a method wherein a hetero junction bipolar photo transistor for receiving an incident light and a surface emitting laser for outputting a laser light are so formed as to be laminated in series on a same substrate. CONSTITUTION:In 2 mirror portions constituting a resonator of a surface light- emitting laser, 2 types of semiconductor AlAs/Al0.05Ga0.95As having different refractive indexes and in which the thickness of each layer is odd times of 1/4 of laser resonant wave length are laminated to provide a distribution brag reflection type mirror (DBR). Here, a p-Al0.2Ga0.8As clad layer 13, an n-Al0.9 Ga0.7As clad layer 15 and a p-Al0.1Ga0.9As ohmic layer 11 are provided. Then, a laser light released to the side of a hetero junction bipolar light transistor is absorbed into a p-In0.05Ga0.95As base layer 18. Further, an incident light is reflected on a DBR mirror to be absorbed while it passes through the base layer 18 twice. |
| 公开日期 | 1992-09-04 |
| 申请日期 | 1991-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64783]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SUSA NOBUHIKO,OMACHI TOKURO,KAWAKAMI GOJI. Surface type semiconductor light switch. JP1992249368A. 1992-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。