Algainp visible light semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI KENICHI; FUJII HIROAKI |
| 发表日期 | 1991-05-13 |
| 专利号 | JP1991112186A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Algainp visible light semiconductor laser |
| 英文摘要 | PURPOSE:To obtain an AlGaInP laser which is side-mode controlled at a low vertical radiation angle by increasing a band gap between a clad layer adjacent to an activation layer and the activation layer in the thick-film activation layer and by forming a layer structure for enabling a mesa shape to be produced easily. CONSTITUTION:An Al0.6Ga0.4As 4, a (Al0.6Ga0.4)0.5In0.5P 2, a thick Ga0.5In0.5P activation layer 1, an (Al0.6Ga0.4)0.5In0.5P 3, a Ga0.5In0.5P 9, an Al0.6Ga0.4As 5, and a GaAs 8 are laminated on a GaAs substrate 10 by the organic metal gaseous phase growth method. A membrane is provided and GaAs and AlGaAs are selectively etched by a mixed liquid of H3PO4+H2O2+H2O, the distance between the bottom surface of a mesa and an activation layer 3 is constantly fixed to the thickness of the layer 3, and the mesa shaping process which is important for producing a horizontal mode control structure can be eased extremely. Then, a current block layer 6 and a GaAs cap 7 are formed in sequence by the organic metal gaseous phase growth method and an electrode is given to the substrate 10 and a cap 7 thus accomplishing the process. |
| 公开日期 | 1991-05-13 |
| 申请日期 | 1989-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64784]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOBAYASHI KENICHI,FUJII HIROAKI. Algainp visible light semiconductor laser. JP1991112186A. 1991-05-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。