Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same
文献类型：专利
| 作者 | WATANABE, YOSHIAKI; TAKEI, KIYOSHI; CHEN, NONG; CHIKUMA, KIYOFUMI |
| 发表日期 | 2001-11-29 |
| 专利号 | US20010046246A1 |
| 著作权人 | PIONEER ELECTRONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same |
| 英文摘要 | There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe. |
| 公开日期 | 2001-11-29 |
| 申请日期 | 2001-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64789]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PIONEER ELECTRONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | WATANABE, YOSHIAKI,TAKEI, KIYOSHI,CHEN, NONG,et al. Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same. US20010046246A1. 2001-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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