Semiconductor optical functional light-emitting element
文献类型：专利
| 作者 | ASATA SUSUMU; HAMADA NORIAKI |
| 发表日期 | 1989-02-02 |
| 专利号 | JP1989032693A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical functional light-emitting element |
| 英文摘要 | PURPOSE:To enable an optical output having a wavelength shorter than an input wavelength by realizing light emission having a wavelength shorter than conventional devices by forming an active layer in specific superlattice structure and shaping an optical absorption section to a clad layer. CONSTITUTION:An N-type AlGaAs clad layer 13, an active layer 14 formed by alternately laminating AlAs diatomic layers and one layer or more of AlAs diatomic layers, a P-type AlGaAs clad layer 15, a current blocking layer 16, and electrodes 10, 17 are shaped onto an N-type GaAs substrate 1 The clad layer 13 includes an AlGaAs optical absorption layer 12 having forbidden band width narrower than an adjacent section on the substrate side. Since the active layer is formed in superlattice structure, direct transition emission is enabled even when a mean Al composition ratio is made higher than conventional devices (0.45), thus manufacturing a short-wave length light-emitting element. The potential barrier of the clad layer 13 is lowered by carriers generated in the optical absorption layer 12 by input beams 18, and the currents of the active layer are increased and laser oscillation is generated, thus also acquiring output beams 19 having a wavelength shorter than input beams 18. |
| 公开日期 | 1989-02-02 |
| 申请日期 | 1987-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64791]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU,HAMADA NORIAKI. Semiconductor optical functional light-emitting element. JP1989032693A. 1989-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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