Surface light-emitting semiconductor mode lock laser
文献类型：专利
| 作者 | IWAMURA HIDETOSHI; UENOHARA HIROYUKI |
| 发表日期 | 1992-09-03 |
| 专利号 | JP1992247676A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface light-emitting semiconductor mode lock laser |
| 英文摘要 | PURPOSE:To enable a quantum-confinement Stark effect to be utilized, degree of freedom within a range where a mode lock occurs to be increased, and controllability to be increased by introducing a superlattice structure at a gain region and a saturable absorption region and then forming a vertical resonator structure for forming a resonator in vertical direction for a growth surface of a crystal. CONSTITUTION:An n-InP buffer layer 2, a saturable absorption region 3 in an n-InGaAs/InP superlattice structure, an n-InP clad layer 4, a gain region 5 in InGaAs/InP superlattice structure (An excitation element absorption peak wavelength of the gain region 5 is set to be equal to an excitation element absorption peak wavelength of the saturable absorption region 3 or longer than it) are allowed to grow in sequence on an InP substrate A peak value of a gain spectrum of the gain region 5 is moved to a desired wavelength and an electric field is adjusted so that a saturable characteristic of the excitation element absorption becomes the maximum. Since light intensity where absorption saturation occurs is small, operation at a low power can be achieved. |
| 公开日期 | 1992-09-03 |
| 申请日期 | 1991-02-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64795]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | IWAMURA HIDETOSHI,UENOHARA HIROYUKI. Surface light-emitting semiconductor mode lock laser. JP1992247676A. 1992-09-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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