Wavelength-tunable semiconductor laser and fabrication process thereof
文献类型：专利
| 作者 | KITAMURA MITSUHIRO; YAMAGUCHI MASAYUKI |
| 发表日期 | 1996-01-16 |
| 专利号 | CA2153909A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Wavelength-tunable semiconductor laser and fabrication process thereof |
| 英文摘要 | A wavelength-tunable semiconductor laser comprisesan active region including an active layer generating anoptical gain by injection of a current, a phase-controlregion including a tuning layer generating variation of arefraction index by injection of the current, and adistributed-Bragg-reflector region including a tuning layergenerating variation of a refraction index by injection ofthe current. The active region, the phase-control region andthe distributed-Bragg-reflector region are arranged inalignment in a resonance direction. A diffraction grating isprovided in the vicinity of the tuning layer of thedistributed-Bragg-reflector region. The wavelength-tunablesemiconductor laser includes means for uniformly injecting asecond current to the phase-control region and thedistributed-Bragg-reflector region. An optical-confinementfactor to the tuning layer of the phase-control region isgreater than an optical-confinement factor to the tuninglayer of the distributed-Bragg-reflector type. |
| 公开日期 | 1996-01-16 |
| 申请日期 | 1995-07-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64799]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | KITAMURA MITSUHIRO,YAMAGUCHI MASAYUKI. Wavelength-tunable semiconductor laser and fabrication process thereof. CA2153909A1. 1996-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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