Single wavelength laser diode
文献类型：专利
| 作者 | KAKIMOTO SHOICHI |
| 发表日期 | 1990-09-25 |
| 专利号 | JP1990241076A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Single wavelength laser diode |
| 英文摘要 | PURPOSE:To manufacture a laser diode oscillating laser beams in a single wavelength by a method wherein the said diode is provided with semiinsulating layers periodically formed on an active layer in the long direction of a resonator and then current is fed to the active layer through the intermediary of the gaps of the peripheral semiinsulating layers. CONSTITUTION:The title single wavelength laser diode is provided with an active layer 12 piled on the first conductivity type crystal layer 11, the second conductivity type guide layer 13 piled on the active layer 12, semiinsulating crystal layers periodically piled on the guide layer 13 in the direction of a laser resonator, the second conductivity type clad layer 15 piled on the said layer 13 filling up the gaps of the said semiinsulating crystal layers 14 and the second conductivity type contact layer 16 piled on the clad layer 15 while current is fed to the said active layer 12 through the intermediary of the clad layer 15 filling up the gas of the said semiinsulating layers 14 periodically piled. Through these procedures, the title laser diode capable of inducing period to the active layer 12 and oscillating laser beams in a single wavelength not only during continuous operation time but also during pulse modulated operation time can be manufactured. |
| 公开日期 | 1990-09-25 |
| 申请日期 | 1989-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64802]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAKIMOTO SHOICHI. Single wavelength laser diode. JP1990241076A. 1990-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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