Coupling of semiconductor laser and photo waveguide
文献类型：专利
| 作者 | YAMASHITA MAKI; MATANO MASAHARU; MORI KAZUHIKO; OOTA NORIHIRO |
| 发表日期 | 1982-07-23 |
| 专利号 | JP1982118686A |
| 著作权人 | TATEISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Coupling of semiconductor laser and photo waveguide |
| 英文摘要 | PURPOSE:To facilitate and perform with precision the positioning of a semiconductor laser relative to a photo waveguide by a method wherein an Si substrate serving as a support is partly transformed into a well by an anisotropic etching technique wherein a semiconductor laser or a photo waveguide is fixedly placed. CONSTITUTION:An SiO2 mask 2 is formed on an Si substrate 1 with the plane direction (110) so that the pattern end and the direction may form an angle of 35.3 deg.. Next, the Si substrate 1 is subjected to etching by using an anistropic etching fluid such as APW for the formation of a well 5 furnished with a vertical wall. Then a semiconductor laser chip 6 is fixedly placed in the well 5. A substrate 8 is placed with the surface provided with the photo waveguide 9 facing down on the SiO2 mask 2 so that it may be pressedly fixed upon the laser chip 6. This method couples the active layer 7 and the photo waveguide 9 with precision. |
| 公开日期 | 1982-07-23 |
| 申请日期 | 1981-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64810]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TATEISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | YAMASHITA MAKI,MATANO MASAHARU,MORI KAZUHIKO,et al. Coupling of semiconductor laser and photo waveguide. JP1982118686A. 1982-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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