Manufacture of semiconductor quantum well wire and quantum well box and device using said manufacture
文献类型：专利
| 作者 | MOCHIZUKI KAZUHIRO; TAKAHASHI SUSUMU; KUSANO CHUSHIRO |
| 发表日期 | 1992-01-08 |
| 专利号 | JP1992003483A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor quantum well wire and quantum well box and device using said manufacture |
| 英文摘要 | PURPOSE:To manufacture a quantum well wire and quantum well box structure only by epitaxial growth while manufacturing a laser device having high performance with excellent reproducibility by using said small-gage wire and structure by utilizing a faucet shape formed on a semiconductor layer containing surface-segregated impurity atoms in high concentration. CONSTITUTION:A semiconductor layer 8 having surface-segregated impurity atoms in high concentration is molecular-beam epitaxial-grown, and an offset is made to appear on a surface. An undoped semiconductor film 9 is grown for preventing a change into a mixed crystal of a hetero-junction due to the diffusion of said atoms, and a first semiconductor layer 10 having large forbidden band width, a second semiconductor layer 11 having small forbidden band width and the first semiconductor layer 10 are laminated on the film 9. Electrons and holes are localized in regions 18 by the three-layer structure of the layers 10, 11, 10 and the film thickness distribution of the layers 10, thus realizing quantum well small-gage wire structure. Manufacture in a short time is enabled because the growth time of the layers 8-10 is approximately six min, and the small-gage wire and the structure can be manufactured without being exposed to atmospheric air, thus improving crystallizability. |
| 公开日期 | 1992-01-08 |
| 申请日期 | 1990-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64815]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MOCHIZUKI KAZUHIRO,TAKAHASHI SUSUMU,KUSANO CHUSHIRO. Manufacture of semiconductor quantum well wire and quantum well box and device using said manufacture. JP1992003483A. 1992-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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