Window structured semiconductor laser and its manufacturing method
文献类型：专利
| 作者 | KOMAZAKI IWAO |
| 发表日期 | 1991-04-16 |
| 专利号 | JP1991091280A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Window structured semiconductor laser and its manufacturing method |
| 英文摘要 | PURPOSE:To stop current leakage from a coupling part and achieve a large output by providing a current block layer below a lower clad layer near the end face of a resonator and at the same time by coupling an activation region with a window region using a high-resistance layer over the entire surface. CONSTITUTION:Carriers injected from a p-side electrode 8 are injected into an activation region 5. However, although they may flow through the interface at a coupling part when a large number of them are injected since a p-GaAs cap layer 7 has low resistance, there is substantially no leakage current through a light guide layer 4 in a window region since an n-type semiconductor layer where Ga ion is injected has high resistance. On the one hand, resistance of a p-type semiconductor layer is reduced after annealing even if the Ga ion beam is injected. On the other hand, since a current block layer 2 is provided at the lower layer of an n-type Al GaAs clad layer 3 of the window region and the coupling part, current leakage at the coupling part and the window region is greatly restricted. |
| 公开日期 | 1991-04-16 |
| 申请日期 | 1989-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64817]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOMAZAKI IWAO. Window structured semiconductor laser and its manufacturing method. JP1991091280A. 1991-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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