Laser diode and optical apparatus using it
文献类型：专利
| 作者 | HIRATA, SHOJI; IMANISHI, DAISUKE |
| 发表日期 | 2006-01-12 |
| 专利号 | US20060007975A1 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode and optical apparatus using it |
| 英文摘要 | A laser diode capable of inhibiting overflow of electrons in a p-type cladding layer and improving temperature characteristics and light emitting efficiency is provided. A laser diode at least comprises: an n-type cladding layer; an active layer; and a p-type cladding layer, which are made of an AlGaInP compound semiconductor material and formed in this order on a substrate. A thickness of the p-type cladding layer is 0.7 μm or less. |
| 公开日期 | 2006-01-12 |
| 申请日期 | 2005-07-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64819]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | HIRATA, SHOJI,IMANISHI, DAISUKE. Laser diode and optical apparatus using it. US20060007975A1. 2006-01-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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