Semiconductor laser and optical communication system using the same
文献类型：专利
| 作者 | OHGOH, TSUYOSHI |
| 发表日期 | 2006-10-05 |
| 专利号 | US20060222029A1 |
| 著作权人 | FUJIFILM CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and optical communication system using the same |
| 英文摘要 | A red semiconductor laser including a first type GaAs substrate having a set of layers sequentially formed on the substrate, which includes at least: a first conductivity type AlInGaP clad layer; an AlInGaP lower optical guide layer; a quantum well active layer made of GaInP or AlInGaP; an AlInGaP upper optical guide layer; a second conductivity type AlInGaP first upper clad layer including a non-doped region formed on the side of the upper clad layer facing the upper optical guide layer; a second conductivity type GaInP heterobuffer layer; and a second conductivity type GaAs cap layer. The second conductivity type carrier concentration at the interface between the first upper clad layer and upper optical guide layer is kept at a value which is less than or equal to 4×1016 cm−3. |
| 公开日期 | 2006-10-05 |
| 申请日期 | 2006-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64822]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIFILM CORPORATION |
| 推荐引用方式 GB/T 7714 | OHGOH, TSUYOSHI. Semiconductor laser and optical communication system using the same. US20060222029A1. 2006-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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