Junction semiconductor light emitting element
文献类型：专利
| 作者 | TADATOMO KAZUYUKI; TANIGUCHI KOICHI; ITO AKIRA |
| 发表日期 | 1989-07-17 |
| 专利号 | JP1989179374A |
| 著作权人 | RES DEV CORP OF JAPAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Junction semiconductor light emitting element |
| 英文摘要 | PURPOSE:To manufacture a light emitting element easily and not only attain high intensity but also improve heat radiation properties, by providing an insulation layer at one side of a semiconductor substrate and forming a groove at least at its layer so that the semiconductor substrate can be exposed, thereby forming semiconductor layers including active layers on the insulation layer respectively in such a way that each groove is coated. CONSTITUTION:An insulating layer is provided by a masking agent on an n-type GaAs substrate B and the insulation layer 1 is equipped with 12 places of circular grooves 7 which expose the substrate B at equal intervals one another. This element allows an n-type AlGaAs clad layer 2, an n-type AlGaAs active layer 3, and a p-type AlGaAs layer 4 to perform an epitaxial growth in order so as to coat each groove 7. Thus, semiconductor layers P having a multilayer structure consisting of double-hetero junction are formed respectively on the insulation layer Then, an electrode E1 as one of electrode materials at a p-side is arranged at the surface of the clad layer 4 with the exception of a top part and also the electrode E2 as one of the electrode materials at an n-side is arranged at the lower face of the substrate B by means of vacuum vaporization and the like. Thus, a semiconductor light emitting element is manufactured. |
| 公开日期 | 1989-07-17 |
| 申请日期 | 1988-01-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64829]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RES DEV CORP OF JAPAN |
| 推荐引用方式 GB/T 7714 | TADATOMO KAZUYUKI,TANIGUCHI KOICHI,ITO AKIRA. Junction semiconductor light emitting element. JP1989179374A. 1989-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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