Manufacturing method for semiconductor laser
文献类型：专利
| 作者 | TAGUCHI TAKASHI; MANNAMI KENGO; UENO YOSHIKI |
| 发表日期 | 1991-04-22 |
| 专利号 | JP1991096290A |
| 著作权人 | NIPPON SOKEN INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacturing method for semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate the manufacture of a high quality and high performance semiconductor laser by using a mask layer for impurity diffusion, then side- etching a lower side mask layer, and turning the layer into a mask for forming a higher resistance layer. CONSTITUTION:After an SiO2 film 7 and an Si3N4 film 8 are formed on the upper surface of an n type GaAs contact layer 6, resist is spread on the surface, and aeolotropic etching is carried out so that an SiO2 stripe 71, and Si3N4 stripe 81 may be formed. They are used as a diffusion mask to diffuse Zn. An activity layer 4 for the Zn diffusion region is used as a mixed crystal layer 41 while an n type clad layer is used as a p type clad layer 51 and a p type contact layer 6 Then the Si3N4 stripe 81 is masked, and side-etched so that the surface of the p type contact layer 61 which is the Zn diffusion region, may be completely exposed. After the Si3N4 stripe 81 is removed in succession, the SiO2 strip 71 is masked where ion is injected, thereby forming a high resistant layer 63. |
| 公开日期 | 1991-04-22 |
| 申请日期 | 1989-09-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64831]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON SOKEN INC |
| 推荐引用方式 GB/T 7714 | TAGUCHI TAKASHI,MANNAMI KENGO,UENO YOSHIKI. Manufacturing method for semiconductor laser. JP1991096290A. 1991-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。