Semiconductor laser light emitting device and method for manufacturing same
文献类型：专利
| 作者 | NOMA, TSUGUKI |
| 发表日期 | 2007-04-26 |
| 专利号 | WO2007046317A1 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser light emitting device and method for manufacturing same |
| 英文摘要 | A semiconductor laser light emitting device (1) is provided with an infrared laser light emitting element (3) wherein a first lower layer clad layer (11), a first active layer (12) and a first upper layer clad layer (13) are stacked; and a red laser light emitting element (4) wherein a second lower layer clad layer (21), a second active layer (22) and a second upper layer clad layer (23) are stacked, on an upper plane of a substrate (2). The first lower layer clad layer (11) is composed of a third lower layer clad layer (17) formed on the entire upper plane of the substrate (2); an etching stop layer (18) formed on the entire plane of a third lower layer clad layer (17); and a fourth lower layer clad layer (19) formed in a region where the infrared laser light emitting element (3) is to be formed on an upper plane of the etching stop layer (18). The second lower layer clad layer (21) is formed in a region on an upper plane of the etching stop layer (18), other than the region wherein the infrared laser light emitting element (3) is to be formed. |
| 公开日期 | 2007-04-26 |
| 申请日期 | 2006-10-16 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64833]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | NOMA, TSUGUKI. Semiconductor laser light emitting device and method for manufacturing same. WO2007046317A1. 2007-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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