Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus
文献类型：专利
| 作者 | ITO, SHIGETOSHI; YAMASAKI, YUKIO; KAWAKAMI, TOSHIYUKI |
| 发表日期 | 2002-10-03 |
| 专利号 | US20020141468A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus |
| 英文摘要 | In connection with a nitride semiconductor laser device optimal for example for optical pickup and an optical information reproduction apparatus having superior condensation characteristics, the semiconductor laser device includes a substrate of nitride semiconductor, a lower clad layer of nitride semiconductor stacked thereon, an active layer stacked thereon, an upper clad layer of nitride semiconductor stacked thereon, and a contact layer of AlaInbGa1-a-bN stacked thereon having a lattice constant larger than the substrate of nitride semiconductor, and the device is cleaved and thus divided to have a surface serving as a resonator mirror. |
| 公开日期 | 2002-10-03 |
| 申请日期 | 2002-03-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64834]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ITO, SHIGETOSHI,YAMASAKI, YUKIO,KAWAKAMI, TOSHIYUKI. Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus. US20020141468A1. 2002-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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