Luminescent element
文献类型：专利
| 作者 | NAKAJIMA KAZUO |
| 发表日期 | 1982-06-26 |
| 专利号 | JP1982103383A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Luminescent element |
| 英文摘要 | PURPOSE:To obtain an extremely thin activated layer 0.1-0.4mum thick with excellent reproducibility by using an InGaAsP compound semiconductor having prescribed composition to clad an AlGaInAs activated layer having prescribed composition which is narrower in energy gap than the former. CONSTITUTION:An activated layer of N AlUGaVIn1-U-VAs (0<=U<=0.47, 0<=V<= 0.47) 3 is laid on N InP 2 on an InP substrate 1, P In1-xGaxAs1-yPy (0<=x<=0.47, 0<=y<=1 ) 4 and a connecting layer 5 having the same composition are laid further thereon, the surface is coated with SiO2 6 selectively, an AuZn electrode 7 is laid thereon, and AuGeNi is added to the substrate The AlGaInAs of the activated layer can cover completely the energy gap of a substrate so far used while being kept in lattice coordination with the InGaAsP of the substrate. In addition, the distribution coefficient of Al is very large, a growing film is therefore thin, and further the growing velocity thereof is remarkably slow. Accordingly, the activated layer of about 0.1-0.2mum can be formed with excellent reproducibility and thus LED for wavelength in a band of 1mum can be obtained. |
| 公开日期 | 1982-06-26 |
| 申请日期 | 1980-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64836]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NAKAJIMA KAZUO. Luminescent element. JP1982103383A. 1982-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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