Semiconductor laser element and manufacture therefor
文献类型：专利
| 作者 | TAKAGI JIYUNKOU; HAYAKAWA TOSHIROU; OOTSUKA NAOTAKA |
| 发表日期 | 1982-06-07 |
| 专利号 | JP1982091581A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture therefor |
| 英文摘要 | PURPOSE:To improve the yield of elements by a method wherein a clad layer, active layer and light guide layer are successively laminated on a substrate and furthermore, an epitaxial growth layer with a W type striped groove being provided thereon is superimposed. CONSTITUTION:A clad layer 22, active layer 23, and light guide layer 24 are successively stacked on a substrate 2 Next, the first epitaxial growth layer 25 processed a W type striped groove at the layer 24 is superimposed. Furthermore, a buried layer 26 burying the striped groove and the second epitaxial growth layer 24 having a current path 28 located at the central section of the striped groove are superimposed. Furthermore, a P type electrode 30 and an N type electrode 29 are successively formed on both surfaces. |
| 公开日期 | 1982-06-07 |
| 申请日期 | 1980-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64837]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | TAKAGI JIYUNKOU,HAYAKAWA TOSHIROU,OOTSUKA NAOTAKA. Semiconductor laser element and manufacture therefor. JP1982091581A. 1982-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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