Evaluation of semiconductor crystal wafer
文献类型：专利
| 作者 | YAMAGUCHI AKIO |
| 发表日期 | 1986-02-25 |
| 专利号 | JP1986039596A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Evaluation of semiconductor crystal wafer |
| 英文摘要 | PURPOSE:To estimate accurately whether the characteristics of a wafer are good or no, by detecting the peak wavelength and the strength at the subpeak appearing in a spectrum component vertical to the interface between active layers among photoluminescence light produced in the active layers. CONSTITUTION:A krypton laser beams from an exciting light source 21 is applied to the part of a sample 24 to be determined, so that it is excited from a P type InP clad layer 5. The vertical photoluminescence light from the sample 24 is collected by a condenser lens 25, and noises thereof are removed to a certain degree by a filter 26. The light is then inputted into a spectroscope 27, where photoluminescence spectrum thereof is determined. It is converted into an electrical signal by a photoelectric converter 28, and the electrical signal is amplified by a lock-in amplifier 29 synchronizing it with a signal from a chopper 22. The amplified output signal is inputted into a recorder 30 where it is represented by a measurement chart of photoluminescence spectrum as shown in the drawing. In this manner, it is estimated whether the sample is possible to radiate laser beams when it becomes a DFB semiconductor laser in the future and the oscillating wavelength is also estimated. |
| 公开日期 | 1986-02-25 |
| 申请日期 | 1984-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64839]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI AKIO. Evaluation of semiconductor crystal wafer. JP1986039596A. 1986-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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