Single hetero structure semiconductor laser diode
文献类型：专利
| 作者 | TOMITA KAZUYOSHI; KITAGAWA FUMITAKA; HASHIMOTO MASAFUMI |
| 发表日期 | 1989-01-19 |
| 专利号 | JP1989015993A |
| 著作权人 | TOYOTA CENTRAL RES & DEV LAB INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Single hetero structure semiconductor laser diode |
| 英文摘要 | PURPOSE:To reduce the boundary surface impurity and the warp of an active layer, and decrease the contact resistance of an electrode, by constituting a structure wherein the following are laminated in order on a P-type compound semiconductor single crystal substrate; a P-type first compound semiconductor clad layer, a P-type second compound semiconductor active layer, and an N-type second compound semiconductor electron-injection layer. CONSTITUTION:A first compound semiconductor is AlxGa1-xAs, and a second compound semiconductor is GaAs. The AlAs composition ratio x of AlxGa1-xAs is 0.2-0.4, and the electron concentration of GaAs is 3X10-8X10cm. To obtain a single hetero structure, a P-type GaAs substrate 11 is used, and thereon the following are formed in order; a P-type AlxGa1-xAs clad layer 12, a P-type GaAs active layer 13, and an N-type GaAs electron-injection layer 14 doped with impurity of high concentration. Since the P-type GaAs substrate 11 is used, the N-type GaAs electron-injection layer 14 doped with impurity of high concentration is grown on the P-type GaAs active layer 13 in which impurity of comparatively low concentration is introduced. Therefore, the active layer is not affected by bad influence, and a flat active layer having little defects in the vicinity of a boundary surface can be obtained. |
| 公开日期 | 1989-01-19 |
| 申请日期 | 1987-07-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64841]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYOTA CENTRAL RES & DEV LAB INC |
| 推荐引用方式 GB/T 7714 | TOMITA KAZUYOSHI,KITAGAWA FUMITAKA,HASHIMOTO MASAFUMI. Single hetero structure semiconductor laser diode. JP1989015993A. 1989-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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