Multi-quantum well semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | YUASA TSUNAO; MANNOU MASAYA; NARIZUKA SHIGEYA; SHINOZAKI KEISUKE; ISHII JUN |
| 发表日期 | 1986-04-28 |
| 专利号 | JP1986084087A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi-quantum well semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To confine light transversely and to reduce oscillating threshold current, by providing with an active layer with a quantum well structure having upper and lower sides put between clad layers, between a pair of grooves formed at a given interval on a semiconductor substrate, the active layer being curved in the longitudinal direction of the clad layers, and by making the apex and its vicinities an oscillating region. CONSTITUTION:An active layer 1 having a quantum well structure is put between upper and lower clad layers 2, 3. On the layer 2, an ohmic electrode forming layer 4 is formed. On the under face of the layer 3, a conductive substrate 6 having a pair of grooves 7 arrayed at a give interval is provided via a buffer layer 5. In the layer 4 above the grooves 7, a strip formed current-injecting region 9 is formed. The active layer 1 is curved between the grooves 7 to make the apex and its vicinities an oscillating region 8. On the top layer 4 a P type electrode 10 is formed and on the bottom face of the substrate 6 an N type electrode is formed. Current flowing through the semiconductor laser results in oscillation at the oscillating region 8. Since the region 8 contacts transversely the clad layers 2, 3 having a low refractive index, transverse confinement of light can be attained. |
| 公开日期 | 1986-04-28 |
| 申请日期 | 1984-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64847]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | YUASA TSUNAO,MANNOU MASAYA,NARIZUKA SHIGEYA,et al. Multi-quantum well semiconductor laser and manufacture thereof. JP1986084087A. 1986-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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