Manufacture of pbsnte laser
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; EBE KOJI; FUKUDA HIROKAZU; SHINOHARA KOJI |
| 发表日期 | 1987-02-09 |
| 专利号 | JP1987030392A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of pbsnte laser |
| 英文摘要 | PURPOSE:To prevent a resonator surface from being damaged by forming a semiconductor laminate for forming a PbSnTe laser on one conductivity type PbTe substrate formed in a projecting stripe interposed between two surfaces, and forming the resonator surface on the extended surfaces of the two surfaces. CONSTITUTION:A P-type PbTe lattice irregularity alleviating layer 2, a P-type PbTe P-type clad layer 3, a PbSnTe active layer 4 and an N-type PbTe N-type clad layer are formed by a hot wall epitaxial method on a substrate The semiconductor laminates 2-5 are grown only on the upper surfaces of a projection 11 and a groove 10. A groove 12 is formed in a direction perpendicular to the groove 10, and a projection is formed between the grooves 12. A striped groove 13 is formed at the center of the adjacent grooves 12 in parallel with the grooves 12, grooves 14 are formed at both sides, the other region are subjected to an anodic oxidation except only the region 13 to form an insulating film 15. Thus, a PbSnTe layer which is not damaged is formed on the resonator surface. |
| 公开日期 | 1987-02-09 |
| 申请日期 | 1985-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64848]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,EBE KOJI,FUKUDA HIROKAZU,et al. Manufacture of pbsnte laser. JP1987030392A. 1987-02-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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