Buried structure semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KOIZUMI YOSHIHIRO |
| 发表日期 | 1989-09-08 |
| 专利号 | JP1989226190A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried structure semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve characteristics of the title laser such as a low threshold current and the like by superimposing a second conductivity type third cladding layer with thickness enough to flatten the upper surface thereof and with the same composition as that of a second cladding layer on a mesa upper portion and on a semiinsulating semiconductor layer. CONSTITUTION:A double hetero structure includes a mesa oriented in the direction, in which an active layer is disposed having its width narrower than the width of a second cladding layer 13 disposed likewise in the mesa. Recesses located on both sides of the active layer is buried with a undoped buried layer 26. Further, a semiinsulating semiconductor layer 16 with its thickness 2mum or more greater than the height of the mesa, and a second conductivity type third cladding layer 17 having its thickness enough to flatten the upper surface thereof and having substantially the same composition as that of the second cladding layer 13 is superimposed on the semiinsulating semiconductor layer 16. |
| 公开日期 | 1989-09-08 |
| 申请日期 | 1988-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64849]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOIZUMI YOSHIHIRO. Buried structure semiconductor laser and manufacture thereof. JP1989226190A. 1989-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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