中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Face light emitting semiconductor laser

文献类型:专利

作者FUKUNAGA TOSHIAKI; TAKAMORI TAKESHI; NONAKA TOSHIO
发表日期1992-04-06
专利号JP1992103185A
著作权人OKI ELECTRIC IND CO LTD
国家日本
文献子类发明申请
其他题名Face light emitting semiconductor laser
英文摘要PURPOSE:To enable a face light emitting semiconductor laser to surely execute a basic mode oscillation and to be integrated high in density by a method wherein active regions making gains and regions making no gain are alternately disposed in periodic arrangement to constitute a horizontal active waveguide, and a total reflection end face inclined at an angle of 45 deg. is provided to the end of a laser oscillation main body. CONSTITUTION:Active regions 30 where gain is made and regions 36a where no gain is made are periodically arranged to form a horizontal active waveguide 54 in parallel with the upside of a substrate in a laser oscillation main body 56, total reflection end faces 50 and 52 inclined at an angle of 45 deg. are provided to the end of the laser oscillation main body 56, a multilayered reflective film 14 of high reflectivity is provided under a lower clad layer 16, and a resonator is constituted between the lower reflective film 14 and an emission window 62. Viewing a resonator from a plane parallel with the upside of the substrate 10, a distance between reflective planes which form the resonator is short, s that a semiconductor laser can be highly integrated. Furthermore, a current can be injected into active layer regions from the upper electrode 46 to start laser oscillation, and as a region 36a is provided, a semiconductor laser of this design can be restrained from increasing in threshold current even if a resonator is formed short in length.
公开日期1992-04-06
申请日期1990-08-23
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/64863]  
专题半导体激光器专利数据库
作者单位OKI ELECTRIC IND CO LTD
推荐引用方式
GB/T 7714
FUKUNAGA TOSHIAKI,TAKAMORI TAKESHI,NONAKA TOSHIO. Face light emitting semiconductor laser. JP1992103185A. 1992-04-06.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。