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A method of manufacturing a semiconductor laser device

文献类型：专利

作者JONATHAN HEFFERNAN
发表日期2001-07-18
专利号GB2358281A
著作权人SHARP KABUSHIKI KAISHA
国家英国
文献子类发明申请
其他题名A method of manufacturing a semiconductor laser device
英文摘要The method comprises growing a cap layer 20 containing a high concentration of crystallographic vacancies over a semiconductor wafer. The wafer is a semiconductor layer structure 14 that contains an active region 17 for laser oscillation. A material 15 for promoting quantum well intermixing such as SiO2 is then deposited over selected portions of the wafer. The wafer is annealed to promote quantum well intermixing in selected portions of the active region, and is then cleaved so that the intermixed regions form non-absorbing minor facets of laser devices. The facet regions will have a greater band gap than the rest of the active region, and this will allow a higher power output before catastrophic optical damage occurs. Growing the cap layer with a high concentration of vacancies improves the efficiency of the intermixing process, and means that the annealing process can be shortened or carried out at a reduced temperature. A high concentration of vacancies in the cap layer 20 can be obtained by growing the cap layer under non-stoichiometric growth conditions.
公开日期2001-07-18
申请日期2000-01-12
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/64864]  
专题半导体激光器专利数据库
作者单位SHARP KABUSHIKI KAISHA
推荐引用方式
GB/T 7714		 JONATHAN HEFFERNAN. A method of manufacturing a semiconductor laser device. GB2358281A. 2001-07-18.

入库方式： OAI收割

来源：西安光学精密机械研究所

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