Semiconductor laser and using method thereof
文献类型：专利
| 作者 | MATSUI TERUHITO; OTSUKA KENICHI; SUGIMOTO HIROSHI; ABE YUJI; OISHI TOSHIYUKI |
| 发表日期 | 1988-11-14 |
| 专利号 | JP1988276290A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and using method thereof |
| 英文摘要 | PURPOSE:To obtain a laser light having different wavelength from one point of one semiconductor laser in a simple structure by forming electrodes to which currents are independently injected of a plurality of active layers having compositions of different light emitting wavelengths. CONSTITUTION:A clad layer 12 of N-type InP is grown on a substrate 11 made of N-type InP, and an active layer 13a of In1-x1Gax1P1-y1 and an active layer 13b of In1-x2Gax2Asy2P1-y2 are then selectively grown. Then, a common optical guide layer 14 made of In1-x3Gax3Asy3P1-y3, a clad layer 15 made of P-type InP, and a cap layer 16 of Ptype InGaAsP are sequentially grown, and P-type electrodes 17a, 17b and N-type electrode 18 corresponding to the layers 13a, 13b are formed. The electrodes to be injected with the currents are switched to switch the laser lights of a plurality of wavelengths from one point of a resonator end face 19. When the currents are injected to the layers 13a, 13b, the laser lights of a plurality of wavelengths can be obtained simultaneously from one point. |
| 公开日期 | 1988-11-14 |
| 申请日期 | 1987-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64865]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MATSUI TERUHITO,OTSUKA KENICHI,SUGIMOTO HIROSHI,et al. Semiconductor laser and using method thereof. JP1988276290A. 1988-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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