中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Distributed feedback type semiconductor array laser

文献类型:专利

作者MIYAZAWA SEIICHI
发表日期1990-03-12
专利号JP1990071573A
著作权人CANON INC
国家日本
文献子类发明申请
其他题名Distributed feedback type semiconductor array laser
英文摘要PURPOSE:To enable the stable oscillation of laser rays of different wavelengths with the same diffraction grating by a method wherein a laser is formed to have such a structure that the distance between the diffraction grating and an active layer is made to vary for every oscillating wavelength. CONSTITUTION:A buffer layer 2 and a lower clad layer 3 are formed on a substrate 1, and a first optical guide layer 5 and a second optical guide layer 6 are successively formed thereon in this order. At this point, a growth is made to stop once, and a wet etching is executed to remove a part of the second optical guide layer 6. Next, a dual light flux interference light exposure is performed to form diffraction gratings taking advantage of a secondary diffraction, where a diffraction grating 7 is formed primarily on the second optical guide layer 6 and a diffraction grating 8 is formed primarily on the first optical guide layer 5 and the pitch difference between the bottom and the top of the diffraction grating is made to be, for instance, 1000Angstrom . An upper clad layer 9 and a contact layer 10 are formed thereon, and the contact layer 10 and the clad layer 9 are partially processed to form an optical wave guide for the formation of a ridged type laser.
公开日期1990-03-12
申请日期1988-09-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/64867]  
专题半导体激光器专利数据库
作者单位CANON INC
推荐引用方式
GB/T 7714
MIYAZAWA SEIICHI. Distributed feedback type semiconductor array laser. JP1990071573A. 1990-03-12.

入库方式: OAI收割

来源:西安光学精密机械研究所

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