Distributed feedback type semiconductor array laser
文献类型:专利
作者 | MIYAZAWA SEIICHI |
发表日期 | 1990-03-12 |
专利号 | JP1990071573A |
著作权人 | CANON INC |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Distributed feedback type semiconductor array laser |
英文摘要 | PURPOSE:To enable the stable oscillation of laser rays of different wavelengths with the same diffraction grating by a method wherein a laser is formed to have such a structure that the distance between the diffraction grating and an active layer is made to vary for every oscillating wavelength. CONSTITUTION:A buffer layer 2 and a lower clad layer 3 are formed on a substrate 1, and a first optical guide layer 5 and a second optical guide layer 6 are successively formed thereon in this order. At this point, a growth is made to stop once, and a wet etching is executed to remove a part of the second optical guide layer 6. Next, a dual light flux interference light exposure is performed to form diffraction gratings taking advantage of a secondary diffraction, where a diffraction grating 7 is formed primarily on the second optical guide layer 6 and a diffraction grating 8 is formed primarily on the first optical guide layer 5 and the pitch difference between the bottom and the top of the diffraction grating is made to be, for instance, 1000Angstrom . An upper clad layer 9 and a contact layer 10 are formed thereon, and the contact layer 10 and the clad layer 9 are partially processed to form an optical wave guide for the formation of a ridged type laser. |
公开日期 | 1990-03-12 |
申请日期 | 1988-09-06 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/64867] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | CANON INC |
推荐引用方式 GB/T 7714 | MIYAZAWA SEIICHI. Distributed feedback type semiconductor array laser. JP1990071573A. 1990-03-12. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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