Semicondutor device
文献类型：专利
| 作者 | YOSHIKAWA AKIO; SUGINO TAKASHI; KAZUMURA MASARU; OOTA KAZUNARI |
| 发表日期 | 1983-09-16 |
| 专利号 | JP1983155720A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semicondutor device |
| 英文摘要 | PURPOSE:To obtain a semiconductor device having desired electrical and optical properties, by making the Miller indice deviation in the direction parallel to the ridge direction of an uneven part such as a stepped part and a groove in a crystal layer formed on a substrate, larger than that in the direction perpendicular to the ridge direction. CONSTITUTION:With a (100) plane employed as a substrate surface, a stepped part is formed on the surface of a substrate 12 so as to have an inverted mesa-shaped cross- section. It is assumed that the Miller indice deviation from the (100) plane in the ridge direction of the stepped part is theta2 and the Miller indice deviation from the (100) plane in the direction perpendicular to the ridge direction of the stepped part is theta A surface 10 has the stepped part, while a surface 11 has the Miller indice deviations theta1 and theta2. In a semiconductor laser element formed by providing, on a GaAs single crytal substrate 12 having a stepped part, an N type GaxAl1-xAs clad layer 17, a GayAl1-yAs active layer 18, a P type GaxAl1-xAs clad layer 19, an N type GaAs layer 20 and an N type GazAl1-zAs layer 21, for example, by selecting values of Miller indice deviations so as to satisfy the relationship, theta1 |
| 公开日期 | 1983-09-16 |
| 申请日期 | 1982-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64868]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA AKIO,SUGINO TAKASHI,KAZUMURA MASARU,et al. Semicondutor device. JP1983155720A. 1983-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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