Photo semiconductor
文献类型：专利
| 作者 | SHIGENO KAZUO |
| 发表日期 | 1986-05-01 |
| 专利号 | JP1986085885A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo semiconductor |
| 英文摘要 | PURPOSE:To obtain the element of a photo semiconductor of easy alignment, low coupling loss and high light deflection function, by forming the semiconductor laser element and the light deflection element on a same substrate. CONSTITUTION:On an N type InP substrate 1, a groove 2 is installed, on which N type InGaAsP guide layer 3, InGaAsP active layer 4, P type InP clad layer 5 and N type InGaAsP cap layer 6 are formed. Zn diffusion and selective proton illumination are made to form high resistance domains 9 and 9', which are separated into the high concentration P type Zn diffusion domains 7 and 8. In case of the ordinary layer emission, current is selectively injected from the Zn diffusion domain 7 by the impressed voltage between a main electrode 10 and a back side electrode 12, and the active layer 4 directly under the Zn diffusion domain operates as the radiant domain. When a positive voltage pulse is impressed to a deflection electrode 11, both carrier density distribution and refractive index distribution are changed, and the left side refractive index of the stripe of the semiconductor laser element reduces, so that the laser light is deflected to the right and the image of the distant visual field deflects to the right. |
| 公开日期 | 1986-05-01 |
| 申请日期 | 1984-10-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64873]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SHIGENO KAZUO. Photo semiconductor. JP1986085885A. 1986-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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