Method for liquid-phase epitaxial growth
文献类型：专利
| 作者 | KUBO MINORU; ISHINO MASATO; SASAI YOICHI; OGURA MOTOTSUGU |
| 发表日期 | 1987-04-25 |
| 专利号 | JP1987090926A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for liquid-phase epitaxial growth |
| 英文摘要 | PURPOSE:To remove the defect of a buried boundary and the influence of an impurity or the like by forming a pattern of InGaAsP at the uppermost layer, and selectively growing the InGaAsP thereon without exposing the boundary of the buried portion. CONSTITUTION:An N type InP layer 10 and an N type InGaAs layer 11 are epitaxially grown on a memi-insulating InP substrate Then, a pattern 12 is formed in the desired pattern by etching the layers 10, 1 Then, to bury the pattern 12, an N type InP layer 13 is epitaxially grown at 630 deg.C of growing temperature. At this time, the layer 13 is grown 0.2mum thick on the exposed substrate portion, the layer 11 is dissolved in InP solution on the pattern 12 to form a flat buried surface. Further, an N type InGaAs layer 2 is continuous ly grown 2mum thick. In the thus obtained structure, a photodetector is formed in a Pin structure, a series resistance component is reduced by implanting the layer 10 to readily accelerate the speed. |
| 公开日期 | 1987-04-25 |
| 申请日期 | 1985-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64874]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KUBO MINORU,ISHINO MASATO,SASAI YOICHI,et al. Method for liquid-phase epitaxial growth. JP1987090926A. 1987-04-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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