Eptaxial crystal growth
文献类型：专利
| 作者 | IMANAKA KOICHI; IMAMOTO HIROSHI |
| 发表日期 | 1989-05-22 |
| 专利号 | JP1989128424A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Eptaxial crystal growth |
| 英文摘要 | PURPOSE:To form a low temperature growth layer of good quality by vapor- depositing group III and V elements alternately in the case of an AlxAGa1-xAs growth onto a GaAs substrate of a (111) B face direction or a (111) A face direction. CONSTITUTION:In the case of an AlxGa1-xAs (x=0-1) epitaxial growth onto a GaAs substrate of a (111) B face direction of a (111) A face direction, the migration of a group III element is carried out in a large way by vapor- depositing group III and V elements alternately by using a molecular beam epitaxial growth. It is preferable for one vapor-depositing time (ON time) of a group III element to take a time for forming a vapor-depositing layer of a molecular layer or less and for a group V element to take a time for forming the vapor depositing layer of a molecular layer or more. The group III element perform migration not as an element of AlGaAs but as the element of Al and Ga. As the amount of migration in the case of single element is exceedingly larger than that of combined elements, two-dimensional growth can be performed and then, a growth layer exhibiting an excellent property of flatness is formed. In this way, a low temperature epitaxial layer of good quality is obtained without holding OFF-angles. |
| 公开日期 | 1989-05-22 |
| 申请日期 | 1987-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64876]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | IMANAKA KOICHI,IMAMOTO HIROSHI. Eptaxial crystal growth. JP1989128424A. 1989-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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