Semiconductor crystal growth method
文献类型：专利
| 作者 | NARIZUKA SHIGEYA; OBA YASUO; KOKUBU YOSHIHIRO |
| 发表日期 | 1989-09-05 |
| 专利号 | JP1989222433A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor crystal growth method |
| 英文摘要 | PURPOSE:To enable semiconductor thin films to be deposited repeatedly without changing the doping concentration in the semiconductor thin films by a method wherein the semiconductor thin films are deposited in the first as well as the repeated processes at the same deposition temperature. CONSTITUTION:A GaAs buffer layer 12, an InGaAlP-n type clad layer 13, an InGaP active layer 14, an InAlP-p type clad layer 15 and a GaAs cap layer 16 in a MOCVD device are deposited on a preprocessed GaAs substrate 11 at the deposition temperature (1) of 700 deg.C. In order to deposit a laser structure, the substrate 11 is etched away taking mesa stripe shape and later a high resistant buried layer 17 (3) is deposited so as to bury the both sides of the stripe, of the substrate 1 The deposition temperature at this time is to be at 700 deg.C similar to that when the double hetero structure (2) is deposited. Through these procedures, the carrier concentration in the layers previously crystal-deposited does not decline even if the crystal deposition is repeated. |
| 公开日期 | 1989-09-05 |
| 申请日期 | 1988-03-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64883]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | NARIZUKA SHIGEYA,OBA YASUO,KOKUBU YOSHIHIRO. Semiconductor crystal growth method. JP1989222433A. 1989-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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