Surface type semiconductor light amplifier
文献类型：专利
| 作者 | KURUMA NITSUSHIYUN |
| 发表日期 | 1989-12-18 |
| 专利号 | JP1989312879A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface type semiconductor light amplifier |
| 英文摘要 | PURPOSE:To facilitate combination with an optical fiber without depending upon the polarization face of amplification gain by making end faces of a columnar active layer act as incident and outgoing faces of light. CONSTITUTION:A p-type InGaAsP active layer 2 grows on an InP substrate and this element allows an n-type InP clad layer 3 to grow by etching its layer 2 so that it is shaped in a columnar form which is almost perpendicular to the substrate. An insulating film 4 is formed selectively on the clad layer 3 and then, an electrode 5 is vaporized and alloyed. Subsequently, the InP substrate and the p-type InGaAs active layer 2 is removed until the cylindrical cross section 6 of the p-type InGaAsP active layer 2 i s obtained and then, an electrode 7 is vaporized and alloyed at the lower part of the clad layer 3. Further, end faces of the active layer which act as incident and outgoing faces of light are covered with anti-reflection coating films 8 and 9. This treatment prevents amplification gain from depending upon a polarization face and facilitates combination with an optical fiber. |
| 公开日期 | 1989-12-18 |
| 申请日期 | 1988-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64891]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KURUMA NITSUSHIYUN. Surface type semiconductor light amplifier. JP1989312879A. 1989-12-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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