Buried semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SUGAO SHIGEO |
| 发表日期 | 1989-09-22 |
| 专利号 | JP1989238183A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce a leakage current in a current blocking layer, to decrease a parasitic capacity, to perform a low threshold value and a high speed operation, and obtain a high manufacturing yield by providing a resonator direction parallel to orientation on a surface in plane (100) so that an active region, first and second conductivity type semiconductor layers are in contact with a semi-insulating semiconductor layer in plane B (111) and plane (100). CONSTITUTION:In a first step, two stripelike SiO2 mask layers 20a are formed by a photolithography method in orientation direction on an N-type InP substrate 10 in plane (100), and a double hetero structure made of an active layer 12, a clad layer 13 and a contact layer 14 is epitaxially grown by a hydride vapor growth. Then, in a second step, after an SiO2 mask layer 20b is formed by a photolithography method on the upper face of a double hetero structure from which the layer 20a is newly removed, a semi-insulating semiconductor layer 18 is buried and grown by a halide vapor growth in the groove made of plane B (111) and plane (100) formed in the first step. Since this semiconductor layer has a less leakage current by a current blocking layer and small parasitic capacity, its low threshold value and high speed operation is performed. |
| 公开日期 | 1989-09-22 |
| 申请日期 | 1988-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64894]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGAO SHIGEO. Buried semiconductor laser and manufacture thereof. JP1989238183A. 1989-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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