Method of controlling forbidden band width of semiconductor superlattice
文献类型：专利
| 作者 | FURUYA AKIRA; MAKIUCHI MASAO; WADA OSAMU |
| 发表日期 | 1989-03-07 |
| 专利号 | JP1989059978A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of controlling forbidden band width of semiconductor superlattice |
| 英文摘要 | PURPOSE:To facilitate varying the forbidden band width of a compound semiconductor superlattice containing As continuously and forming parts which have forbidden band widths different from each other selectively in one substrate by a method wherein an insulating layer which is to be a passivation film is formed on a part of the surface of a semiconductor layer structure including the compound semiconductor superlattice and the layer structure is subjected to a heat treatment under an As4 pressure and the type of the insulating layer and the As4 pressure are varied. CONSTITUTION:An n-type Al0.3Ga0.7As cladding layer 2, an MQW active layer 3, a p-type Al0.3Ga0.7As cladding layer 4 and a p-type GaAs contact layer 5 are successively built up on an ntype GaAs substrate 1 by a molecular beam epitaxy(MBE) method to form a layer structure. An SiN layer is formed on a part of the surface of the layer structure as a passivation film 6 and the layer structure is subjected to a heat treatment in a sealed tube under an arsenic pressure about 20Torr. As a result, in the region to which the arsenic pressure is directly applied, passivation conditions given by the arsenic pressure are degraded and PL is shifted to 770-780nm. The shift rate of PL can be selected arbitrarily within a range about 760-810nm continuously by varying the arsenic pressure. On the other hand, the passivation effect of the SiN layer functions remarkably in the region under the passivation film and PL of a super-lattice is not varied so much and is 810-820nm so that the forbidden band width in this region can be reduced by the value corresponding to PL about 40nm. |
| 公开日期 | 1989-03-07 |
| 申请日期 | 1987-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64897]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FURUYA AKIRA,MAKIUCHI MASAO,WADA OSAMU. Method of controlling forbidden band width of semiconductor superlattice. JP1989059978A. 1989-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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