Element with superlattice structure
文献类型：专利
| 作者 | KARASAWA TAKESHI; OKAWA KAZUHIRO; MITSUYU TSUNEO |
| 发表日期 | 1990-04-26 |
| 专利号 | JP1990114648A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Element with superlattice structure |
| 英文摘要 | PURPOSE:To make it possible to epitaxially grow a single superlattice to a thickness which exceeded the critical film thickness of each layer by a method wherein the superlattice consisting of the same material is constituted as a combination of a superlattice having a grating constant larger than that of a substrate and a superlattice having a grating constant smaller than that of the substrate. CONSTITUTION:In case each layer is made thin, a superlattice is divided into two parts of a superlattice, whose mean grating constant is some larger than that of a substrate, and a superlattice, whose mean grating constant is smaller than that of the substrate, and a lattice matching is made as the mean in the whole. The large and small relation among a mean grating constant dSI of a superlattice I, a mean grating constant dSII of a superlattice II and the grating constant dGaAs of the substrate is dSII |
| 公开日期 | 1990-04-26 |
| 申请日期 | 1988-10-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64926]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | KARASAWA TAKESHI,OKAWA KAZUHIRO,MITSUYU TSUNEO. Element with superlattice structure. JP1990114648A. 1990-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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