Semiconductor element and manufacture thereof
文献类型：专利
| 作者 | SEKII HIROSHI; IMANAKA KOICHI |
| 发表日期 | 1991-10-23 |
| 专利号 | JP1991237784A |
| 著作权人 | OMRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce the ohmic contact resistance between the uppermost layer of a semiconductor element and an electrode, by forming a PN junction current blocking layer composed of a first semiconductor layer of first conductivity type and a second semiconductor layer of second conductivity type, forming a current path region of second conductivity type from the second semiconductor layer to the first semiconductor layer in a part of the blocking layer, and forming an ohmic contact electrode on almost the whole upper surface of the second semiconductor layer. CONSTITUTION:On a substrate 10 the following are grown in order; a lower clad layer 11, a GaAs active layer 12, a P-AlGaAs upper clad layer 13, an N-AlGaAs layer 14, and a P-AlGaAs cap layer 15. In the central part above the cap layer 15, Zn is diffused down to the clad layer 13 so as to have a desired light emitting diameter, by using Zn diffusion in a quartz tube. A mask using AZ resist is formed only in the part above a P-Zn diffusion region 16; a P-side electrode 18 is vapor-deposited on the whole upper surface of the cap layer 15; the mask is eliminated by lift-off and the like; thus a window 18a for leading out light is formed in the P-side electrode 18. Hence the P-side electrode 18 comes into ohmic contact with the cap layer 15, on the whole surface except the window 18a. |
| 公开日期 | 1991-10-23 |
| 申请日期 | 1990-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64938]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON CORP |
| 推荐引用方式 GB/T 7714 | SEKII HIROSHI,IMANAKA KOICHI. Semiconductor element and manufacture thereof. JP1991237784A. 1991-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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