Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device
文献类型：专利
| 作者 | OKUMURA, TOSHIYUKI |
| 发表日期 | 2002-07-04 |
| 专利号 | US20020085603A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device |
| 英文摘要 | A gallium nitride semiconductor laser device has an active layer (6) made of a nitride semiconductor containing at least indium and gallium between an n-type cladding layer (5) and a p-type cladding layer (9). The active layer (6) is composed of two quantum well layers (14) and a barrier layer (15) interposed between the quantum well layers, and constitutes an oscillating section of the semiconductor laser device. The quantum well layers (14) and the barrier layer (15) have thicknesses of, preferably, 10 nm or less. In this semiconductor laser device, electrons and holes can be uniformly distributed in the two quantum well layers (14). In addition, electrons and holes are effectively injected into the quantum well layers from which electrons and holes have already been disappeared by recombination. Consequently, the semiconductor laser device has an excellent laser oscillation characteristic. |
| 公开日期 | 2002-07-04 |
| 申请日期 | 2002-01-17 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64944]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | OKUMURA, TOSHIYUKI. Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device. US20020085603A1. 2002-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。