Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method on manufacturing the same, and VCSEL diode
文献类型：专利
| 作者 | KIM, KI SOO; HAN, WONK SEOK; KIM, SUNG BOCK; OH, DAE KON |
| 发表日期 | 2007-06-07 |
| 专利号 | US20070127535A1 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method on manufacturing the same, and VCSEL diode |
| 英文摘要 | A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics. |
| 公开日期 | 2007-06-07 |
| 申请日期 | 2006-10-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64945]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | KIM, KI SOO,HAN, WONK SEOK,KIM, SUNG BOCK,et al. Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method on manufacturing the same, and VCSEL diode. US20070127535A1. 2007-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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