Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits
文献类型：专利
| 作者 | LOTT, JAMES A.; LEDENTSOV, NIKOLAI; SHCHUKIN, VITALY |
| 发表日期 | 2013-05-16 |
| 专利号 | US20130122617A1 |
| 著作权人 | CONNECTOR OPTICS LLC |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits |
| 英文摘要 | Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate. |
| 公开日期 | 2013-05-16 |
| 申请日期 | 2012-10-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64949]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CONNECTOR OPTICS LLC |
| 推荐引用方式 GB/T 7714 | LOTT, JAMES A.,LEDENTSOV, NIKOLAI,SHCHUKIN, VITALY. Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits. US20130122617A1. 2013-05-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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