Method and structure for low stress oxide VCSEL
文献类型：专利
| 作者 | LIN, CHAO-KUN; CORZINE, SCOTT W.; TAN, MICHAEL R. T. |
| 发表日期 | 2007-04-26 |
| 专利号 | US20070091961A1 |
| 著作权人 | AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method and structure for low stress oxide VCSEL |
| 英文摘要 | The etched sidewalls of laterally oxidized VCSEL structures are coated with a dielectric film to inhibit oxidation of the DBR layers during the oxidation process. While oxidation of the DBR mirror layers is not completely eliminated, the number of DBR mirror layers that are oxidized is significantly reduced, thereby reducing the DBR oxide stress. |
| 公开日期 | 2007-04-26 |
| 申请日期 | 2005-10-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65042]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD. |
| 推荐引用方式 GB/T 7714 | LIN, CHAO-KUN,CORZINE, SCOTT W.,TAN, MICHAEL R. T.. Method and structure for low stress oxide VCSEL. US20070091961A1. 2007-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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