Vertical cavity surface emitting semiconductor laser device
文献类型：专利
| 作者 | SHINAGAWA, TATSUYUKI; IWAI, NORIHIRO; YOKOUCHI, NORIYUKI |
| 发表日期 | 2003-03-13 |
| 专利号 | US20030048824A1 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical cavity surface emitting semiconductor laser device |
| 英文摘要 | A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0 |
| 公开日期 | 2003-03-13 |
| 申请日期 | 2002-08-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65079]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | SHINAGAWA, TATSUYUKI,IWAI, NORIHIRO,YOKOUCHI, NORIYUKI. Vertical cavity surface emitting semiconductor laser device. US20030048824A1. 2003-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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