Integration of transistors with vertical cavity surface emitting lasers
文献类型：专利
| 作者 | OLBRIGHT, GREGORY, R.; JEWELL, JACK, L. |
| 发表日期 | 1993-07-22 |
| 专利号 | WO1993014520A1 |
| 著作权人 | BANDGAP TECHNOLOGY CORPORATION |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Integration of transistors with vertical cavity surface emitting lasers |
| 英文摘要 | Optoelectronic integrated circuits (110) are disclosed comprising a vertical-cavity surface emitting laser (VCSEL) (118) and a transistor (116). The VCSEL comprises a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers (142, 144) surrounding one or more active, optically emitting quantum-well layers (3) having a bandgap in the visible range which serves as the active optically emitting material of the device. The thickness of the laser cavity is mlambda/2neff where m is an integer, lambda is the free-space wavelength of the laser radiation and neff is the effective index of refraction of the cavity. Electrical pumping of the laser (118) is achieved by heavily doping the bottom mirror (145) and substrate to one conductivity-type and heavily doping the regions of the upper mirror (141) with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Embodiments are disclosed which integrate the VCSEL (118) with bipolar (126, 136) and FET (316) transistors as well as phototransistors (416). |
| 公开日期 | 1993-07-22 |
| 申请日期 | 1993-01-21 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65103]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BANDGAP TECHNOLOGY CORPORATION |
| 推荐引用方式 GB/T 7714 | OLBRIGHT, GREGORY, R.,JEWELL, JACK, L.. Integration of transistors with vertical cavity surface emitting lasers. WO1993014520A1. 1993-07-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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