Mode selective semiconductor mirror for vertical cavity surface emitting lasers
文献类型：专利
| 作者 | COX, JAMES A.; KIM, JIN K.; PARK, GYOUNGWON |
| 发表日期 | 2006-03-02 |
| 专利号 | US20060045146A1 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Mode selective semiconductor mirror for vertical cavity surface emitting lasers |
| 英文摘要 | A vertical cavity surface emitting laser with a mode-selective mirror. A filter is formed on the top DBR stack of a VCSEL. The filter includes semiconductor layers that are etch stops for immediately superior layers. The filter is selectively etched to create a first region that is phase matched to the top DBR stack and a second region that is phase mismatched to the top DBR stack. The second region inhibits undesired modes and provides additional absorption for the undesired modes. The first region is formed using a wet-etch process whose etch depth is controlled because the semiconductor layers are etch stops for immediately superior layers. |
| 公开日期 | 2006-03-02 |
| 申请日期 | 2005-07-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65174]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | COX, JAMES A.,KIM, JIN K.,PARK, GYOUNGWON. Mode selective semiconductor mirror for vertical cavity surface emitting lasers. US20060045146A1. 2006-03-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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