Quantum dot vertical cavity surface emitting laser and fabrication method of the same
文献类型：专利
| 作者 | LEE, EUN-KYUNG; CHOI, BYOUNG-LYONG |
| 发表日期 | 2008-09-18 |
| 专利号 | US20080227230A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum dot vertical cavity surface emitting laser and fabrication method of the same |
| 英文摘要 | A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL. |
| 公开日期 | 2008-09-18 |
| 申请日期 | 2008-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65577]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | LEE, EUN-KYUNG,CHOI, BYOUNG-LYONG. Quantum dot vertical cavity surface emitting laser and fabrication method of the same. US20080227230A1. 2008-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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