Vertical-cavity surface emitting laser diode
文献类型：专利
| 作者 | HORNG, RAY-HUA; WU, DONG-SING |
| 发表日期 | 2005-10-13 |
| 专利号 | US20050226299A1 |
| 著作权人 | NATIONAL CHUNG-HSING UNIVERSITY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical-cavity surface emitting laser diode |
| 英文摘要 | The present invention provides a VCSEL (vertical-cavity surface emitting laser) diode, in which a p-type cladding layer is formed on an active layer and surrounded with an insulation edge. An annular p-type electrode is formed on the ptype cladding layer close to the insulation edge and an upper DBR mirror is formed therewithin. According to the present invention, light beams emitting from the active layer will not be shielded by a central electrode and brightness of the laser diode is improved. |
| 公开日期 | 2005-10-13 |
| 申请日期 | 2005-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65629]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL CHUNG-HSING UNIVERSITY |
| 推荐引用方式 GB/T 7714 | HORNG, RAY-HUA,WU, DONG-SING. Vertical-cavity surface emitting laser diode. US20050226299A1. 2005-10-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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