DBR using the combination of II-VI and III-V materials for the application to 3-55 mum
文献类型：专利
| 作者 | KWON, HOKI |
| 发表日期 | 2005-11-03 |
| 专利号 | US20050243887A1 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | DBR using the combination of II-VI and III-V materials for the application to 3-55 mum |
| 英文摘要 | A VCSEL includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; and a second mirror stack over the active region, wherein either or both of the first and second mirror stacks include alternating layers of II-VI and III-V compounds, and wherein said II-VI compound is selected from the group consisting of ZnCdSe, ZnSeTe and ZnMgSe, and said III-V compound is selected from the group consisting of InGaAsP, InAlGaAs and InP. Such a mirror stack is especially useful for a long-wavelength VCSEL. |
| 公开日期 | 2005-11-03 |
| 申请日期 | 2004-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65664]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | KWON, HOKI. DBR using the combination of II-VI and III-V materials for the application to 3-55 mum. US20050243887A1. 2005-11-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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