Semiconductor laser and method of manufacture
文献类型：专利
| 作者 | TAKASHI, NISHIMURA; SHOICHI, KARAKIDA; MOTOHARU, MIYASHITA; DIETHARD, MARX |
| 发表日期 | 1997-09-03 |
| 专利号 | GB2310757A |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and method of manufacture |
| 英文摘要 | The device comprises a ridge structure (41); a cladding layer (4) included in the ridge structure (41) and current blocking structures (6a) disposed at both sides of the ridge structure (41) and including Al x Ga 1-x As first current blocking layers (6a) having an Al composition x larger than 0.7 and contacting the ridge structure (41). The current blocking layer (6) may be fabricated using a plurality of monomolecular AlAs and GaAs layers or by forming an Al x Ga 1-x As layer where x varies throughout the layer. The thermal expansion coefficient of the current blocking layer may be matched to the cladding layer. Layer 7 may have poor crystallinity to provide a stress relieving layer.; Even when the Al composition of the first current blocking layers (6a) is reduced at both sides of the ridge structure (41), the wavelength of the first current blocking layers (6a) does not exceed the wavelength of laser light produced in the active layer (3). Therefore, unwanted absorption of the laser light at both sides of the ridge structure (41) is avoided, resulting in a semiconductor laser with improved laser characteristics. |
| 公开日期 | 1997-09-03 |
| 申请日期 | 1996-10-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65763]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKASHI, NISHIMURA,SHOICHI, KARAKIDA,MOTOHARU, MIYASHITA,et al. Semiconductor laser and method of manufacture. GB2310757A. 1997-09-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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