Semiconductor material having si-doped gainp cap layer
文献类型：专利
| 作者 | MAEDA SHIGEO; TOYAMA OSAMU; WATABE SHINICHI |
| 发表日期 | 1992-10-05 |
| 专利号 | JP1992278522A |
| 著作权人 | MITSUBISHI CABLE IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor material having si-doped gainp cap layer |
| 英文摘要 | PURPOSE:To obtain semiconductor material wherein propagation of a crosshatched pattern and dislocation which are caused by a GaAsP substrate and peculiar to a GaInP layer is prevented, and the ohmic resistance value to an electrode is decreased. CONSTITUTION:GaInP layers 2, 3 and an Si-doped GaInP layer 4 are formed on a GaAsP substrate When a GaInP epitaxial layer 4 doped with Si is formed, a layer of low dislocation density having a flat surface is obtained, and the ohmic property between the Si-doped GaInP layer 4 and an electrode is improved. Hence, when an LED or an LD is formed on the semiconductor material obtained by this invention, the quality and the reliability can remarkably be improved. The above material is especially effective for orange to blue light emitting elements. |
| 公开日期 | 1992-10-05 |
| 申请日期 | 1991-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65771]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CABLE IND LTD |
| 推荐引用方式 GB/T 7714 | MAEDA SHIGEO,TOYAMA OSAMU,WATABE SHINICHI. Semiconductor material having si-doped gainp cap layer. JP1992278522A. 1992-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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