Surface emitting semiconductor laser and its manufacture
文献类型：专利
| 作者 | HAMAO NOBORU |
| 发表日期 | 1991-11-15 |
| 专利号 | JP1991256389A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To reduce an oscillation threshold current when this laser is used for an optical exchange apparatus, an optical information processing apparatus or the like by a method wherein an active layer has a structure containing at least one quantum well, an impurity introduction region is provided at the side face of a semiconductor laminated structure and the impurity introduction region is separated in the laminate direction. CONSTITUTION:A quantum-well active layer 6 which is composed of an InyGa1-yAs quantum- well layer and a GaAs confinement layer is formed on an n-type clad layer 5. Then, a p-type semiconductor multilayer reflection film 10 is formed. An insulating film of SiO2, SiN or the like or a photoresist is formed; an etching operation is executed by using this mask 12 until the quantum-well active layer is exposed; Zn as impurities is diffused to the side face; an impurity intorduction layer 13 in a protruding and recessed shape is formed. The Zn is diffused to the quantum-well active layer 6 from its side face and also from a p-type clad layer and the n-type clad layer; the Zn of the same amount as the clad layers is diffused to the quantum-well active layer 6; the Zn is made disordered; a buried strucutre is formed. The impurity introduction region in the p-type and n-type GaAs layers 3, 9 is etched and removed. The impurity introduction region 13 is divided into stages in the laminate direction. |
| 公开日期 | 1991-11-15 |
| 申请日期 | 1990-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65774]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HAMAO NOBORU. Surface emitting semiconductor laser and its manufacture. JP1991256389A. 1991-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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